STP33N65M2

MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package

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R 65.17

R 53.32

R 51.16

R 50.09

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MOSFETs N-channel 650 V, 0.117 Ohm typ 24 A MDmesh M2 Power MOSFET in TO-220 package
Lead Time: 112 Days

Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	117 mOhms
Pd - Power Dissipation	190 W
Id - Continuous Drain Current	24 A
Qg - Gate Charge	41.5 nC
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Channel Mode	Enhancement
Packaging	Tube
Technology	Si
Mounting Style	Through Hole
Configuration	Single

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Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	117 mOhms
Pd - Power Dissipation	190 W
Id - Continuous Drain Current	24 A
Qg - Gate Charge	41.5 nC
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Channel Mode	Enhancement
Packaging	Tube
Technology	Si
Mounting Style	Through Hole
Configuration	Single