STP33N60M6

MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-220 package

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R 55.20

R 54.93

R 53.86

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MOSFETs N-channel 600 V, 105 mOhm typ 25 A MDmesh M6 Power MOSFET
Lead Time: 98 Days

Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	33.4 nC
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.25 V
Id - Continuous Drain Current	25 A
Technology	Si
Configuration	Single
Packaging	Tube
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	125 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	190 W

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Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	33.4 nC
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.25 V
Id - Continuous Drain Current	25 A
Technology	Si
Configuration	Single
Packaging	Tube
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	125 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	190 W