STP33N60M2

MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2

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R 120.37

R 117.14

R 65.70

R 60.32

R 60.05

R 50.62

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MOSFETs N-CH 600V 0.108Ohm typ. 26A MDmesh M2
Lead Time: 112 Days

Products specifications

Pd - Power Dissipation	190 W
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	108 mOhms
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	26 A
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Tube
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	45.5 nC

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Products specifications

Pd - Power Dissipation	190 W
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	108 mOhms
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	26 A
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Tube
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	45.5 nC