STP33N60DM2

MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package

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R 98.56

R 62.20

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R 52.78

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MOSFETs N-channel 600 V, 0.110 Ohm typ 24 A MDmesh DM2 Power MOSFET in TO-220 package
Lead Time: 112 Days

Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	43 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	24 A
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Tradename	MDmesh
Number of Channels	1 Channel
Pd - Power Dissipation	190 W
Rds On - Drain-Source Resistance	130 mOhms

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Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	43 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	24 A
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Tradename	MDmesh
Number of Channels	1 Channel
Pd - Power Dissipation	190 W
Rds On - Drain-Source Resistance	130 mOhms