STP32NM50N

MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET

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R 148.64

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R 112.56

R 110.14

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MOSFETs N-Ch 500V 0.1 Ohm 22A MDmesh II FET
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Products specifications

Pd - Power Dissipation	190 W
Qg - Gate Charge	62.5 nC
Technology	Si
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	13.86 A
Vgs th - Gate-Source Threshold Voltage	4 V
Configuration	Single
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	500 V
Rds On - Drain-Source Resistance	130 mOhms

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Products specifications

Pd - Power Dissipation	190 W
Qg - Gate Charge	62.5 nC
Technology	Si
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	13.86 A
Vgs th - Gate-Source Threshold Voltage	4 V
Configuration	Single
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	500 V
Rds On - Drain-Source Resistance	130 mOhms