STP20NM60

MOSFET N-Ch 600 Volt 20 Amp
Lead Time: 112 Days

SKU: STP20NM60

Availability: 572 in stock

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R 79.98

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MOSFETs N-Ch 600 Volt 20 Amp
Lead Time: 91 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Height	9.15 mm
Length	10.4 mm
Series	STP20NM60, M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Fall Time	11 ns, 108 ns, 16 ns
Product Type	MOSFET
Rise Time	20 ns, 183 ns, 13.5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	42 ns, 90 ns, 64.7 ns
Typical Turn-On Delay Time	25 ns, 18 ns, 20.2 ns
Unit Weight	1.438 g, 1.800 g, 2 g
Id - Continuous Drain Current	22 A, 120 A, 20 A
Rds On - Drain-Source Resistance	190 mOhms, 2.15 mOhms, 210 mOhms, 290 mOhms
Vds - Drain-Source Breakdown Voltage	30 V, 900 V, 600 V
Vgs - Gate-Source Voltage	20 V, 30 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V
Qg - Gate Charge	53 nC, 40 nC
Minimum Operating Temperature	- 55 C, - 65 C
Maximum Operating Temperature	+ 175 C, + 150 C
Pd - Power Dissipation	176.5 W, 250 W, 192 W
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Configuration	Single
Technology	Si
Channel Mode	Enhancement
Tradename	MDmesh
Packaging	Tube

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Height	9.15 mm
Length	10.4 mm
Series	STP20NM60, M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Fall Time	11 ns, 108 ns, 16 ns
Product Type	MOSFET
Rise Time	20 ns, 183 ns, 13.5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	42 ns, 90 ns, 64.7 ns
Typical Turn-On Delay Time	25 ns, 18 ns, 20.2 ns
Unit Weight	1.438 g, 1.800 g, 2 g
Id - Continuous Drain Current	22 A, 120 A, 20 A
Rds On - Drain-Source Resistance	190 mOhms, 2.15 mOhms, 210 mOhms, 290 mOhms
Vds - Drain-Source Breakdown Voltage	30 V, 900 V, 600 V
Vgs - Gate-Source Voltage	20 V, 30 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V
Qg - Gate Charge	53 nC, 40 nC
Minimum Operating Temperature	- 55 C, - 65 C
Maximum Operating Temperature	+ 175 C, + 150 C
Pd - Power Dissipation	176.5 W, 250 W, 192 W
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Configuration	Single
Technology	Si
Channel Mode	Enhancement
Tradename	MDmesh
Packaging	Tube