STP20NM50FD

MOSFET N-Ch 500 Volt 20 Amp
Lead Time: 112 Days

SKU: STP20NM50FD

Availability: 917 in stock

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25+

Price

R 103.40

R 97.48

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MOSFETs N-Ch 500 Volt 20 Amp
Lead Time: 91 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Vds - Drain-Source Breakdown Voltage	600 V, 30 V, 900 V, 500 V
Rds On - Drain-Source Resistance	290 mOhms, 190 mOhms, 2.15 mOhms, 210 mOhms, 250 mOhms
Tradename	MDmesh, FDmesh
Height	9.15 mm
Length	10.4 mm
Series	STP20NM60, M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Fall Time	11 ns, 108 ns, 16 ns
Product Type	MOSFET
Rise Time	20 ns, 183 ns, 13.5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	42 ns, 90 ns, 64.7 ns
Typical Turn-On Delay Time	25 ns, 18 ns, 20.2 ns
Unit Weight	1.438 g, 1.800 g, 2 g
Id - Continuous Drain Current	22 A, 120 A, 20 A
Vgs - Gate-Source Voltage	20 V, 30 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V
Qg - Gate Charge	53 nC, 40 nC
Minimum Operating Temperature	- 55 C, - 65 C
Maximum Operating Temperature	+ 175 C, + 150 C
Pd - Power Dissipation	176.5 W, 250 W, 192 W
Packaging	Tube
Configuration	Single
Channel Mode	Enhancement
Technology	Si
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Vds - Drain-Source Breakdown Voltage	600 V, 30 V, 900 V, 500 V
Rds On - Drain-Source Resistance	290 mOhms, 190 mOhms, 2.15 mOhms, 210 mOhms, 250 mOhms
Tradename	MDmesh, FDmesh
Height	9.15 mm
Length	10.4 mm
Series	STP20NM60, M6, STP200N3LL, STP20N90K5
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Fall Time	11 ns, 108 ns, 16 ns
Product Type	MOSFET
Rise Time	20 ns, 183 ns, 13.5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	42 ns, 90 ns, 64.7 ns
Typical Turn-On Delay Time	25 ns, 18 ns, 20.2 ns
Unit Weight	1.438 g, 1.800 g, 2 g
Id - Continuous Drain Current	22 A, 120 A, 20 A
Vgs - Gate-Source Voltage	20 V, 30 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V
Qg - Gate Charge	53 nC, 40 nC
Minimum Operating Temperature	- 55 C, - 65 C
Maximum Operating Temperature	+ 175 C, + 150 C
Pd - Power Dissipation	176.5 W, 250 W, 192 W
Packaging	Tube
Configuration	Single
Channel Mode	Enhancement
Technology	Si
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel