STP200NF03

MOSFET N-Ch 30 Volt 120 Amp

SKU: STP200NF03

Availability: 1000 in stock

Qty:

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Quantity

25+

Price

R 60.59

R 44.97

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MOSFETs N-Ch 30 Volt 120 Amp
Lead Time: 182 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Rds On - Drain-Source Resistance	2.15 mOhms, 3.2 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	53 nC
Pd - Power Dissipation	176.5 W, 300 W
Series	STP200N3LL
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Fall Time	108 ns
Product Type	MOSFET
Rise Time	183 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	90 ns
Typical Turn-On Delay Time	18 ns
Unit Weight	1.800 g
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	120 A
Technology	Si
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Rds On - Drain-Source Resistance	2.15 mOhms, 3.2 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	53 nC
Pd - Power Dissipation	176.5 W, 300 W
Series	STP200N3LL
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Fall Time	108 ns
Product Type	MOSFET
Rise Time	183 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	90 ns
Typical Turn-On Delay Time	18 ns
Unit Weight	1.800 g
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	120 A
Technology	Si
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement