STP200N3LL

MOSFET N-channel 30 V, 2 mOhm typ 120 A, STripFET H6 Power MOSFET
Lead Time: 364 Days

SKU: STP200N3LL

Availability: 2021 in stock

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R 36.35

R 22.94

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MOSFETs N-channel 30 V, 2 mOhm typ 120 A, STripFET H6 Power MOSFET
Lead Time: 182 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Vds - Drain-Source Breakdown Voltage	600 V, 30 V
Id - Continuous Drain Current	22 A, 120 A
Rds On - Drain-Source Resistance	190 mOhms, 2.15 mOhms
Packaging	Tube
Series	M6, STP200N3LL
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Fall Time	108 ns
Rise Time	183 ns
Typical Turn-Off Delay Time	90 ns
Typical Turn-On Delay Time	18 ns
Unit Weight	1.800 g
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1 V
Channel Mode	Enhancement
Configuration	Single
Pd - Power Dissipation	176.5 W
Qg - Gate Charge	53 nC
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Package/Case	TO-220-3
Vds - Drain-Source Breakdown Voltage	600 V, 30 V
Id - Continuous Drain Current	22 A, 120 A
Rds On - Drain-Source Resistance	190 mOhms, 2.15 mOhms
Packaging	Tube
Series	M6, STP200N3LL
Transistor Type	1 N-Channel
Brand	STMicroelectronics
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Fall Time	108 ns
Rise Time	183 ns
Typical Turn-Off Delay Time	90 ns
Typical Turn-On Delay Time	18 ns
Unit Weight	1.800 g
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1 V
Channel Mode	Enhancement
Configuration	Single
Pd - Power Dissipation	176.5 W
Qg - Gate Charge	53 nC
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole