STP19NM50N

MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power

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R 51.70

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MOSFETs N-Ch 500V 14A Mosfet Mdmesh II Power
Lead Time: 112 Days

Products specifications

Qg - Gate Charge	34 nC
Id - Continuous Drain Current	14 A
Tradename	MDmesh
Technology	Si
Vds - Drain-Source Breakdown Voltage	500 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Rds On - Drain-Source Resistance	250 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	110 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Qg - Gate Charge	34 nC
Id - Continuous Drain Current	14 A
Tradename	MDmesh
Technology	Si
Vds - Drain-Source Breakdown Voltage	500 V
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Rds On - Drain-Source Resistance	250 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	110 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V