MOSFET N-CH 600V 0.25Ohm 13A FDMesh II
Products specifications
Number of Channels | 1 Channel |
Qg - Gate Charge | 34 nC |
Vds - Drain-Source Breakdown Voltage | 650 V |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 25 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 290 mOhms |
Mounting Style | Through Hole |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Pd - Power Dissipation | 130 W |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 13 A |