STP18N65M2

MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFETs N-channel 650 V, 0.275 Ohm typ 12 A MDmesh M2 Power MOSFET in TO-220 package
Lead Time: 112 Days

Products specifications

Rds On - Drain-Source Resistance	275 mOhms
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	20 nC
Technology	Si
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole
Packaging	Tube
Number of Channels	1 Channel
Id - Continuous Drain Current	12 A
Channel Mode	Enhancement
Pd - Power Dissipation	110 W
Tradename	MDmesh

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Products specifications

Rds On - Drain-Source Resistance	275 mOhms
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	20 nC
Technology	Si
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole
Packaging	Tube
Number of Channels	1 Channel
Id - Continuous Drain Current	12 A
Channel Mode	Enhancement
Pd - Power Dissipation	110 W
Tradename	MDmesh