STP18N60M2

MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2

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MOSFETs N-CH 600V 0.255Ohm 13A MDmesh M2
Lead Time: 112 Days

Products specifications

Id - Continuous Drain Current	13 A
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Qg - Gate Charge	21.5 nC
Configuration	Single
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	255 mOhms
Pd - Power Dissipation	110 W

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Products specifications

Id - Continuous Drain Current	13 A
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Qg - Gate Charge	21.5 nC
Configuration	Single
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	255 mOhms
Pd - Power Dissipation	110 W