STP18N60DM2

R 1.00

MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package

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MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package

Products specifications

Technology	Si
Qg - Gate Charge	20 nC
Number of Channels	1 Channel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	260 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	90 W
Id - Continuous Drain Current	12 A
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole

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Products specifications

Technology	Si
Qg - Gate Charge	20 nC
Number of Channels	1 Channel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	260 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	90 W
Id - Continuous Drain Current	12 A
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole