MOSFET N-Ch 100V 3.9 mOhm 180A STripFET
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 315 W |
Rds On - Drain-Source Resistance | 4.5 mOhms |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 100 V |
Packaging | Tube |
Qg - Gate Charge | 114.6 nC |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Technology | Si |
Id - Continuous Drain Current | 120 A |
Tradename | STripFET |