MOSFET N-channel 80 V, 0.003 Ohm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package
Products specifications
Pd - Power Dissipation | 250 W |
Maximum Operating Temperature | + 175 C |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 120 A |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Channel Mode | Enhancement |
Qg - Gate Charge | 120 nC |
Rds On - Drain-Source Resistance | 3.9 mOhms |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 20 V |
Tradename | STripFET |
Technology | Si |