STP16N65M2

R 1.00

MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Number of Channels	1 Channel
Id - Continuous Drain Current	11 A
Transistor Polarity	N-Channel
Qg - Gate Charge	19.5 nC
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Rds On - Drain-Source Resistance	360 mOhms
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Mounting Style	Through Hole
Pd - Power Dissipation	110 W
Technology	Si
Packaging	Tube

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Products specifications

Number of Channels	1 Channel
Id - Continuous Drain Current	11 A
Transistor Polarity	N-Channel
Qg - Gate Charge	19.5 nC
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Rds On - Drain-Source Resistance	360 mOhms
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Mounting Style	Through Hole
Pd - Power Dissipation	110 W
Technology	Si
Packaging	Tube