STP16N60M2

R 1.00

MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Qg - Gate Charge	19 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Tradename	MDmesh
Rds On - Drain-Source Resistance	320 mOhms
Id - Continuous Drain Current	12 A
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Pd - Power Dissipation	110 W

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Products specifications

Qg - Gate Charge	19 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Tradename	MDmesh
Rds On - Drain-Source Resistance	320 mOhms
Id - Continuous Drain Current	12 A
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Pd - Power Dissipation	110 W