STP16N50M2

R 1.00

MOSFET N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package

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MOSFET N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package

Products specifications

Pd - Power Dissipation	110 W
Qg - Gate Charge	19.5 nC
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	500 V
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	13 A
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	280 mOhms
Technology	Si
Packaging	Tube
Tradename	MDmesh
Number of Channels	1 Channel

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Products specifications

Pd - Power Dissipation	110 W
Qg - Gate Charge	19.5 nC
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	500 V
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	13 A
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	280 mOhms
Technology	Si
Packaging	Tube
Tradename	MDmesh
Number of Channels	1 Channel