MOSFET N-Ch 100V 4.1 160A STripFET DeepGATE
Products specifications
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Number of Channels | 1 Channel |
Tradename | STripFET |
Vgs - Gate-Source Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 100 V |
Qg - Gate Charge | 192 nC |
Rds On - Drain-Source Resistance | 5.5 mOhms |
Configuration | Single |
Id - Continuous Drain Current | 120 A |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 315 W |