STP160N3LL

R 1.00

MOSFET N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package

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MOSFET N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package

Products specifications

Tradename	STripFET
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	3.2 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	42 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Technology	Si
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	120 A
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	136 W
Configuration	Single
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	30 V

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Products specifications

Tradename	STripFET
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	3.2 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	42 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Technology	Si
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	120 A
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	136 W
Configuration	Single
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	30 V