MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET
Products specifications
Id - Continuous Drain Current | 14 A |
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Tube |
Pd - Power Dissipation | 190 W |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Rds On - Drain-Source Resistance | 300 mOhms |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 800 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 32 nC |
Transistor Polarity | N-Channel |