STP15N60M2-EP

R 1.00

MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package

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MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package

Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Pd - Power Dissipation	110 W
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	17 nC
Minimum Operating Temperature	- 55 C
Technology	Si
Id - Continuous Drain Current	11 A
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	378 mOhms
Number of Channels	1 Channel
Tradename	MDmesh

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Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Pd - Power Dissipation	110 W
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	17 nC
Minimum Operating Temperature	- 55 C
Technology	Si
Id - Continuous Drain Current	11 A
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	378 mOhms
Number of Channels	1 Channel
Tradename	MDmesh