MOSFET N-Ch 100V 0.0036Ohm typ. 110A
Products specifications
Packaging | Tube |
Id - Continuous Drain Current | 110 A |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 117 nC |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Configuration | Single |
Pd - Power Dissipation | 250 W |
Vds - Drain-Source Breakdown Voltage | 100 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 175 C |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 20 V |
Tradename | STripFET |
Rds On - Drain-Source Resistance | 4.2 mOhms |