MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II
Products specifications
Technology | Si |
Vgs - Gate-Source Voltage | 2 V |
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Configuration | Single |
Mounting Style | Through Hole |
Packaging | Tube |
Pd - Power Dissipation | 90 W |
Qg - Gate Charge | 42 nC |
Id - Continuous Drain Current | 12 A |
Vds - Drain-Source Breakdown Voltage | 500 V |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 280 mOhms |