MOSFET N Ch 100V 0.115 OHM 15A
Products specifications
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Qg - Gate Charge | 15.5 nC |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 175 C |
Vds - Drain-Source Breakdown Voltage | 100 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 130 mOhms |
Technology | Si |
Pd - Power Dissipation | 60 W |
Tradename | STripFET |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Id - Continuous Drain Current | 15 A |
Mounting Style | Through Hole |