MOSFET N-CH 600V 0.32Ohm 11A FDMesh II
Products specifications
Technology | Si |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Packaging | Tube |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Configuration | Single |
Id - Continuous Drain Current | 11 A |
Pd - Power Dissipation | 109 W |
Vgs - Gate-Source Voltage | 25 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 24.5 nC |
Rds On - Drain-Source Resistance | 380 mOhms |
Vds - Drain-Source Breakdown Voltage | 650 V |