STP130N6F7

R 1.00

MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package

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MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package

Products specifications

Rds On - Drain-Source Resistance	5 mOhms
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	160 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	42 nC
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Tradename	STripFET
Id - Continuous Drain Current	80 A
Technology	Si

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Products specifications

Rds On - Drain-Source Resistance	5 mOhms
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	160 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	42 nC
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Tradename	STripFET
Id - Continuous Drain Current	80 A
Technology	Si