STP12N60M2

R 1.00

MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Number of Channels	1 Channel
Configuration	Single
Tradename	MDmesh
Channel Mode	Enhancement
Mounting Style	Through Hole
Qg - Gate Charge	16 nC
Technology	Si
Id - Continuous Drain Current	9 A
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	395 mOhms
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	85 W
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Number of Channels	1 Channel
Configuration	Single
Tradename	MDmesh
Channel Mode	Enhancement
Mounting Style	Through Hole
Qg - Gate Charge	16 nC
Technology	Si
Id - Continuous Drain Current	9 A
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	395 mOhms
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	85 W
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C