STP12N50M2

R 1.00

MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	85 W
Vgs - Gate-Source Voltage	25 V
Technology	Si
Transistor Polarity	N-Channel
Tradename	MDmesh
Rds On - Drain-Source Resistance	380 mOhms
Qg - Gate Charge	15 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	500 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	10 A
Configuration	Single

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Products specifications

Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	85 W
Vgs - Gate-Source Voltage	25 V
Technology	Si
Transistor Polarity	N-Channel
Tradename	MDmesh
Rds On - Drain-Source Resistance	380 mOhms
Qg - Gate Charge	15 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	500 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	10 A
Configuration	Single