MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI
Products specifications
Qg - Gate Charge | 65 nC |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 110 W |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Id - Continuous Drain Current | 80 A |
Number of Channels | 1 Channel |
Technology | Si |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 4.3 mOhms |
Tradename | STripFET |