MOSFET N-channel 600V, 10A FDMesh II
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 25 V |
Packaging | Tube |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 450 mOhms |
Id - Continuous Drain Current | 10 A |
Transistor Polarity | N-Channel |
Tradename | FDmesh |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Pd - Power Dissipation | 90 W |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |