MOSFET N-Ch 600 Volt 11 Amp
Products specifications
Rds On - Drain-Source Resistance | 450 mOhms |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 65 C |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 30 V |
Packaging | Tube |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 35 W |
Transistor Polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Id - Continuous Drain Current | 11 A |