STP11N65M5

R 1.00

MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V

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MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V

Products specifications

Id - Continuous Drain Current	9 A
Configuration	Single
Tradename	MDmesh
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Rds On - Drain-Source Resistance	480 mOhms
Pd - Power Dissipation	85 W
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Id - Continuous Drain Current	9 A
Configuration	Single
Tradename	MDmesh
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Rds On - Drain-Source Resistance	480 mOhms
Pd - Power Dissipation	85 W
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel