STP11N65M2

R 1.00

MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Number of Channels	1 Channel
Rds On - Drain-Source Resistance	670 mOhms
Id - Continuous Drain Current	7 A
Tradename	MDmesh II Plus
Transistor Polarity	N-Channel
Configuration	Single
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	85 W
Technology	Si
Qg - Gate Charge	12.5 nC
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Number of Channels	1 Channel
Rds On - Drain-Source Resistance	670 mOhms
Id - Continuous Drain Current	7 A
Tradename	MDmesh II Plus
Transistor Polarity	N-Channel
Configuration	Single
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	85 W
Technology	Si
Qg - Gate Charge	12.5 nC
Vgs th - Gate-Source Threshold Voltage	3 V