STP11N60DM2

R 1.00

MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

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MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	16.5 nC
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	10 A
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	370 mOhms
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Tradename	MDmesh
Number of Channels	1 Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	16.5 nC
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	10 A
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	370 mOhms
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Tradename	MDmesh
Number of Channels	1 Channel