STP110N8F7

R 1.00

MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package

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MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package

Products specifications

Technology	Si
Id - Continuous Drain Current	80 A
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	46.8 nC
Pd - Power Dissipation	170 W
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	80 V
Rds On - Drain-Source Resistance	7.5 mOhms
Minimum Operating Temperature	- 55 C
Configuration	Single

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Products specifications

Technology	Si
Id - Continuous Drain Current	80 A
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	46.8 nC
Pd - Power Dissipation	170 W
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	80 V
Rds On - Drain-Source Resistance	7.5 mOhms
Minimum Operating Temperature	- 55 C
Configuration	Single