STP110N8F6

MOSFET N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET

SKU: STP110N8F6

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MOSFET N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET

Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	150 nC
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Pd - Power Dissipation	200 W
Rds On - Drain-Source Resistance	6.5 mOhms
Vds - Drain-Source Breakdown Voltage	80 V
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Technology	Si
Configuration	Single
Id - Continuous Drain Current	110 A
Number of Channels	1 Channel
Mounting Style	Through Hole
Transistor Polarity	N-Channel

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Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	150 nC
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Pd - Power Dissipation	200 W
Rds On - Drain-Source Resistance	6.5 mOhms
Vds - Drain-Source Breakdown Voltage	80 V
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Technology	Si
Configuration	Single
Id - Continuous Drain Current	110 A
Number of Channels	1 Channel
Mounting Style	Through Hole
Transistor Polarity	N-Channel