MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Maximum Operating Temperature | + 175 C |
Vgs - Gate-Source Voltage | 20 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 7 nC |
Transistor Polarity | P-Channel |
Rds On - Drain-Source Resistance | 180 mOhms |
Pd - Power Dissipation | 35 W |
Id - Continuous Drain Current | 10 A |
Configuration | Single |
Tradename | STripFET |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Mounting Style | Through Hole |
Packaging | Tube |