STP10N105K5

R 1.00

MOSFET N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-220 package

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MOSFET N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-220 package

Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	21.5 nC
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	1.05 kV
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Id - Continuous Drain Current	6 A
Pd - Power Dissipation	130 W
Technology	Si
Rds On - Drain-Source Resistance	1.3 Ohms
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	4 V

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Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	21.5 nC
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	1.05 kV
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	30 V
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Id - Continuous Drain Current	6 A
Pd - Power Dissipation	130 W
Technology	Si
Rds On - Drain-Source Resistance	1.3 Ohms
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	4 V