STP10LN80K5

R 1.00

MOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package

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MOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package

Products specifications

Qg - Gate Charge	15 nC
Configuration	Single
Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	630 mOhms
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	110 W
Id - Continuous Drain Current	8 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh

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Products specifications

Qg - Gate Charge	15 nC
Configuration	Single
Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	630 mOhms
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	800 V
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	110 W
Id - Continuous Drain Current	8 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh