STP100N6F7

R 1.00

MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package

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MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package

Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	100 A
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Qg - Gate Charge	30 nC
Rds On - Drain-Source Resistance	5.6 mOhms
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Technology	Si
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Mounting Style	Through Hole
Packaging	Tube
Pd - Power Dissipation	125 W

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Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	100 A
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Qg - Gate Charge	30 nC
Rds On - Drain-Source Resistance	5.6 mOhms
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Technology	Si
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Mounting Style	Through Hole
Packaging	Tube
Pd - Power Dissipation	125 W