STO33N60M6

R 1.00

MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-LL package

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MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-LL package

Products specifications

Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3.25 V
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Configuration	Single
Qg - Gate Charge	33.4 nC
Pd - Power Dissipation	230 W
Channel Mode	Enhancement
Id - Continuous Drain Current	25 A
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	125 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel

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Products specifications

Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3.25 V
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Configuration	Single
Qg - Gate Charge	33.4 nC
Pd - Power Dissipation	230 W
Channel Mode	Enhancement
Id - Continuous Drain Current	25 A
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	125 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel