MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI
Products specifications
Pd - Power Dissipation | 2.6 W |
Configuration | Single |
Transistor Polarity | P-Channel |
Tradename | STripFET |
Maximum Operating Temperature | + 175 C |
Rds On - Drain-Source Resistance | 160 mOhms |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 6.4 nC |
Id - Continuous Drain Current | 3 A |
Technology | Si |