MOSFET N-Ch 60 Volt 4 Amp
Products specifications
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Id - Continuous Drain Current | 4 A |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 100 mOhms |
Pd - Power Dissipation | 3.3 W |
Vgs - Gate-Source Voltage | 10 V |
Configuration | Single |
Qg - Gate Charge | 10 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Tradename | STripFET |
Technology | Si |