MOSFET N-Ch 400V 3.3 Ohm 3A SuperMESH3 3.3W
Products specifications
Rds On - Drain-Source Resistance | 3.4 Ohms |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Qg - Gate Charge | 11 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Configuration | Single |
Pd - Power Dissipation | 3.3 W |
Vds - Drain-Source Breakdown Voltage | 400 V |
Id - Continuous Drain Current | 1.8 A |
Tradename | SuperMESH |