Vds - Drain-Source Breakdown Voltage | 600 V |
Rds On - Drain-Source Resistance | 13 Ohms |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 3.3 W |
Id - Continuous Drain Current | 300 mA |
Qg - Gate Charge | 4.9 nC |
Vgs - Gate-Source Voltage | 30 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |