MOSFET P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
Products specifications
Pd - Power Dissipation | 3 W |
Transistor Polarity | P-Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 9 A |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Tradename | STripFET |
Vgs - Gate-Source Voltage | 20 V |
Rds On - Drain-Source Resistance | 12 mOhms |
Number of Channels | 1 Channel |
Qg - Gate Charge | 24 nC |