STL9N60M2

R 1.00

MOSFET N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package

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MOSFET N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package

Products specifications

Configuration	Single
Qg - Gate Charge	10 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	4.8 A
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	860 mOhms
Transistor Polarity	N-Channel
Tradename	MDmesh
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	48 W
Technology	Si

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Products specifications

Configuration	Single
Qg - Gate Charge	10 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	4.8 A
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	860 mOhms
Transistor Polarity	N-Channel
Tradename	MDmesh
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	48 W
Technology	Si