STL8N10F7

R 1.00

MOSFET N-channel 100 V, 0.017 Ohm typ., 35 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

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MOSFET N-channel 100 V, 0.017 Ohm typ., 35 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

Products specifications

Rds On - Drain-Source Resistance	17 mOhms
Qg - Gate Charge	25 nC
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Transistor Polarity	N-Channel
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	35 A
Vgs th - Gate-Source Threshold Voltage	2.5 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	50 W
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Rds On - Drain-Source Resistance	17 mOhms
Qg - Gate Charge	25 nC
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Transistor Polarity	N-Channel
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	35 A
Vgs th - Gate-Source Threshold Voltage	2.5 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	50 W
Channel Mode	Enhancement
Configuration	Single